| PART |
Description |
Maker |
| RF5117C RF5117CPCBA |
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
|
RF Micro Devices
|
| 187-ARCE-X-X-X |
OUTLINE, WR187 ARC DETEC. 90 E-BEND
|
Advanced Technical Materials Inc.
|
| TPD03-02G08S |
2-8GHz 3-Way Power Divider
|
Transcom, Inc.
|
| TPD04-02G08S |
2-8GHz 4-Way Power Divider
|
Transcom, Inc.
|
| SZM-3066Z |
3.3-3.8GHz 2W Power Amplifier
|
Sirenza Microdevices, Inc
N.A.
|
| CHA6015-99F |
2-8GHz High Power Amplifier
|
United Monolithic Semic...
|
| AM27C010-90PI AM27C010-150DC AM27C010-120DE AM27C0 |
1.6V, 1µA Precision Rail-to-Rail Input and Output Op Amp; Package: SOT; No of Pins: 5; Temperature Range: -40°C to 85°C
Very Low Noise, Differential Amplifier and 10MHz Lowpass Filter; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
40MHz to 3.8GHz RF Power Detector with 75dB Dynamic Range; Package: DFN; No of Pins: 8; Temperature Range: -40°C to 85°C
1 Megabit (128 K x 8-Bit) CMOS EPROM(174.08 k) 1兆位28亩8位）的CMOS存储器（174.08十一
1 Megabit (128 K x 8-Bit) CMOS EPROM(174.08 k) 1兆位128亩8位）的CMOS存储器（174.08十一
|
Advanced Micro Devices, Inc.
TUSONIX, Inc.
YEONHO Electronics Co., Ltd.
|
| ARF1501 |
RF POWER MOSFET 250V 1500W 40MHz
RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
ER 3C 3#16S SKT RECP
|
Advanced Power Technology Ltd.
|
| MGFC39V5258 C395258 |
5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.2~5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ADL855PC-600C-G5 ADL855PC ADL855PC-140-G5 ADL855PC |
CPU 0.6GHz - 1.8GHz
|
Advanced Digital Logic, Inc.
|
